Tr. Haller et al., HIGH-FREQUENCY PERFORMANCE OF GE HIGH-DENSITY INTERCONNECT MODULES, IEEE transactions on components, hybrids, and manufacturing technology, 16(1), 1993, pp. 21-27
Citations number
4
Categorie Soggetti
Material Science","Engineering, Eletrical & Electronic
Layout and routing of high frequency multichip modules (MCM's) require
s a detailed electromagnetic characterization of the interconnect stru
cture in order to intelligently manage required design trade-offs. To
provide this characterization for the GE high density interconnect pro
cess (HDI) a number of test coupons containing a variety of transmissi
on line structures were prepared. S-parameter data were measured using
a vector network analyzer (VNA) and these measured data were compared
to the theoretical predictions based upon classical transmission line
theory. Reasonable agreement is obtained provided: 1) skin and proxim
ity effects in the lines and ground planes are taken into account, and
2) the nonrectangular natures of the conductor cross sections are acc
urately modeled. Results suggest that insertion loss rather than cross
talk is likely to be limiting for frequencies up to 9 GHz. For 20% (2
dB) attenuation line lengths range 3-12 cm for the frequency range 1-9
GHz.