HIGH-FREQUENCY PERFORMANCE OF GE HIGH-DENSITY INTERCONNECT MODULES

Citation
Tr. Haller et al., HIGH-FREQUENCY PERFORMANCE OF GE HIGH-DENSITY INTERCONNECT MODULES, IEEE transactions on components, hybrids, and manufacturing technology, 16(1), 1993, pp. 21-27
Citations number
4
Categorie Soggetti
Material Science","Engineering, Eletrical & Electronic
ISSN journal
01486411
Volume
16
Issue
1
Year of publication
1993
Pages
21 - 27
Database
ISI
SICI code
0148-6411(1993)16:1<21:HPOGHI>2.0.ZU;2-A
Abstract
Layout and routing of high frequency multichip modules (MCM's) require s a detailed electromagnetic characterization of the interconnect stru cture in order to intelligently manage required design trade-offs. To provide this characterization for the GE high density interconnect pro cess (HDI) a number of test coupons containing a variety of transmissi on line structures were prepared. S-parameter data were measured using a vector network analyzer (VNA) and these measured data were compared to the theoretical predictions based upon classical transmission line theory. Reasonable agreement is obtained provided: 1) skin and proxim ity effects in the lines and ground planes are taken into account, and 2) the nonrectangular natures of the conductor cross sections are acc urately modeled. Results suggest that insertion loss rather than cross talk is likely to be limiting for frequencies up to 9 GHz. For 20% (2 dB) attenuation line lengths range 3-12 cm for the frequency range 1-9 GHz.