ELECTRICAL CHARACTERISTICS OF MULTICHIP MODULE INTERCONNECTS WITH PERFORATED REFERENCE PLANES

Citation
Ac. Cangellaris et al., ELECTRICAL CHARACTERISTICS OF MULTICHIP MODULE INTERCONNECTS WITH PERFORATED REFERENCE PLANES, IEEE transactions on components, hybrids, and manufacturing technology, 16(1), 1993, pp. 113-118
Citations number
7
Categorie Soggetti
Material Science","Engineering, Eletrical & Electronic
ISSN journal
01486411
Volume
16
Issue
1
Year of publication
1993
Pages
113 - 118
Database
ISI
SICI code
0148-6411(1993)16:1<113:ECOMMI>2.0.ZU;2-P
Abstract
A quasi-TEM approach is demonstrated for the equivalent transmission l ine characterization of multichip-module (MCM) interconnects with perf orated (mesh) reference planes. The proposed method can be used to obt ain effective transmission line parameters for both single and coupled interconnects, which in turn can be used directly in SPICE-like wavef orm simulation tools for an overall electrical analysis of complex MCM interconnect nets. Comparisons to experimental results obtained from the literature, as well as results obtained from full-wave modeling of the interconnect structures, demonstrate the validity of the proposed approach and help define the frequency range of its accuracy.