MICROSCALE CHARACTERIZATION OF EPITAXIAL SEMICONDUCTING HOMOLAYERS .2. ELECTRON-BEAM-INDUCED CURRENT

The dependence of the electron beam induced current (EBIC) collection efficiency eta(CC) on the electron beam voltage is modelled for the pa rticular case of the GaAs homostructure studied in part I of this pape r. The minority carrier diffusion length L1 and the doping level N(D1) of the uppermost layer, as well as the value of the first and second interface recombination velocities V1 and V2 can be determined by this technique. The experiments, performed on two homostructures, grown in the same conditions, on semi-insulating substrates supplied by differ ent manufacturers, indicate the influence of the substrate on the valu e of L1 and N(D1).