ULTRA-LOW-VOLTAGE MTCMOS SIMOX TECHNOLOGY HARDENED TO TEMPERATURE-VARIATION/

A novel multi-threshold CMOS(MTCMOS) circuit which offers the advantag e ofless variation in leakage current and delay time over a wide tempe rature range is described. It is shown that MTCMOS/SIMOX technology, w hich uses a SIMOX device and combines fully depleted low-threshold MOS FETs and partially depleted high-threshold MOSFETs, can reduce variati on of circuit performance due to changes in the operating temperature. To evaluate the variation in circuit performance, models of the leaka ge-current and the delay-time including operating temperature are deri ved. Calculations using the models verify that the MTCMOS/SIMOX device with threshold voltages immune to temperature changes reduces the var iation. This is also confirmed by an evaluation of a gate-chain TEG de signed and fabricated with 0.25 mu m MTCMOS/SIMOX technology. (C) 1997 Elsevier Science Ltd.