NOVEL TRANSIENT PHENOMENA IN HETEROJUNCTION BIPOLAR-TRANSISTORS

Authors
POSSE VA JALALI B
Citation
Va. Posse et B. Jalali, NOVEL TRANSIENT PHENOMENA IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 41(4), 1997, pp. 527-530
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
4
Year of publication
1997
Pages
527 - 530
Database
ISI
SICI code
0038-1101(1997)41:4<527:NTPIHB>2.0.ZU;2-Y
Abstract
The interaction between transferred-electron effect and base widening under transient conditions in III-V heterojunction bipolar transistors is considered. Modification of the collector field profile with an n( +) doping spike is shown to cause a time delay for the onset of Kirk e ffect creating conditions for the inception of charge instabilities. N umerical simulations suggest the possibility of sustainable intrinsic current oscillations in properly engineered bipolar transistor structu res. (C) 1997 Elsevier Science Ltd.