SPACE-CHARGE TRANSIENTS OF DEEP-LEVEL DEFECTS CHARACTERIZED BY AUGER CAPTURE

The space charge transients of a deep level defect characterised by Au ger capture have been investigated. The work was motivated by capacita nce-voltage and deep level transient spectroscopy measurements of vari ous DX doped GaAlAs samples. It is shown that compared to a defect wit h the usual single electron capture process such defects exhibit a bas ically different behaviour. The detection of such defects by space cha rge transient techniques (e.g. capacitance, admittance and DLTS measur ements) is rather limited, and evaluation of the data requires modific ation of the usually applied simple models. The above defects belong t o a new class of technologically important defects which may affect de gradation and efficiency in several devices. (C) 1997 Elsevier Science Ltd.