A GA2O3 PASSIVATION TECHNIQUE COMPATIBLE WITH GAAS DEVICE PROCESSING

Electronic and structural properties of ex-situ fabricated Ga2O3-GaAS interfaces: have been investigated. The fabrication comprises thermal desorption of native oxide and;subsequent Ga2O3 film deposition on (10 0) GaAs wafers in ultra-high vacuum. Interfacial x-ray photoelectron s pectroscopy revealed the absence of AsxOy indicating thermodynamic sta bility of the oxide-GaAs interface. A low interface recombination velo city S of 9000 cm/s equivalent to an interface state density D-it in t he upper 10(10) cm(-2) eV(-1) range has bean inferred. The technique p rovides excellent passivation for GaAs wafers or surfaces exposed to r oom air and/or processing environments during fabrication of devices s uch as FETs, HBTs, etc. (C) 1997 Elsevier Science Ltd.