IMPACT OF THE SERIES RESISTANCE ON THE PARAMETER EXTRACTION OF SUBMICRON SILICON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS OPERATED AT 77 K

In this paper, the impact of the series resistance on the parameter ex traction of LDD n-MOSFETs operated at 77 K is investigated. More speci fically, the applicability of the so-called universal empirical mobili ty law is critically studied. It is shown that this method fails if th e series resistance shows a pronounced gate voltage dependence. Howeve r, a simple correction procedure is proposed which extends the method and enables a straightforward parameter extraction for MOSFETs at cryo genic temperatures. To that end, the series resistance in linear opera tion is derived by combining the total resistance of two transistors o nly; a long reference device and a shorter L-array transistor. (C) 199 7 Elsevier Science Ltd.