CHARACTERIZATION OF AS-DEPOSITED AND ANNEALED INDIUM OXIDE THIN-FILMS

Indium oxide films were deposited by an electron beam evaporation tech nique on Corning(R) glass substrates at various substrate temperatures ranging from 25 to 300-degrees-C. As-deposited films appeared to be d ark or semitransparent; whether they were amorphous or polycrystalline depended on the substrate temperature. In order to obtain good opto-e lectronic properties, these films were subjected to a heat treatment i n air at various temperatures ranging from 250 to 600-degrees-C. The I n2O3 film prepared at 25-degrees-C and annealed at 500-degrees-C in ai r was found to be a good transparent conductor. The optical, electrica l and structural properties of films deposited at various substrate te mperatures and annealed at various temperatures are discussed.