Indium oxide films were deposited by an electron beam evaporation tech
nique on Corning(R) glass substrates at various substrate temperatures
ranging from 25 to 300-degrees-C. As-deposited films appeared to be d
ark or semitransparent; whether they were amorphous or polycrystalline
depended on the substrate temperature. In order to obtain good opto-e
lectronic properties, these films were subjected to a heat treatment i
n air at various temperatures ranging from 250 to 600-degrees-C. The I
n2O3 film prepared at 25-degrees-C and annealed at 500-degrees-C in ai
r was found to be a good transparent conductor. The optical, electrica
l and structural properties of films deposited at various substrate te
mperatures and annealed at various temperatures are discussed.