SELECTIVE MELTBACK ETCHING OF GAN LAYERS IN LIQUID-PHASE ELECTROEPITAXIAL TECHNIQUE

Authors
NOVIKOV SV CHENG TS MAHMOOD Z HARRISON I FOXON CT
Citation
Sv. Novikov et al., SELECTIVE MELTBACK ETCHING OF GAN LAYERS IN LIQUID-PHASE ELECTROEPITAXIAL TECHNIQUE, Journal of crystal growth, 173(1-2), 1997, pp. 1-4
Citations number
19
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
173
Issue
1-2
Year of publication
1997
Pages
1 - 4
Database
ISI
SICI code
0022-0248(1997)173:1-2<1:SMEOGL>2.0.ZU;2-R
Abstract
Meltback etching and selective meltback etching of GaN layers have bee n achieved using both liquid-phase epitaxy (LPE) and liquid-phase elec troepitaxy (LPEE) techniques with Ga-As solutions. Both the uniformity and the etching rate (similar to 2.4 mu m/h) were improved using the LPEE technique.