A NEW CHEMICAL ETCH FOR DEFECTS STUDIES IN VERY THIN-FILM (LESS-THAN 1000 ANGSTROM) SIMOX MATERIAL

Authors
GILES LF NEJIM A HEMMENT PLF
Citation
Lf. Giles et al., A NEW CHEMICAL ETCH FOR DEFECTS STUDIES IN VERY THIN-FILM (LESS-THAN 1000 ANGSTROM) SIMOX MATERIAL, Materials chemistry and physics, 35(2), 1993, pp. 129-133
Citations number
12
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
35
Issue
2
Year of publication
1993
Pages
129 - 133
Database
ISI
SICI code
0254-0584(1993)35:2<129:ANCEFD>2.0.ZU;2-3
Abstract
A new chemical solution has been developed to delineate crystallograph ic defects in thin silicon overlayers (<1000 angstrom) of fully anneal ed SIMOX material. The new etchant is based on the HF:HNO3:H2O system and has proved to be superior to other etchants based upon dilute Secc o solutions. Analysis by plan-view TEM has shown that SIMOX materials with a silicon overlayer as thin as 650 angstrom can be analyzed using this new etch.