SELECTIVE ORGANOMETALLIC VAPOR-PHASE EPITAXY OF GA AND IN COMPOUNDS -A COMPARISON OF TMIN AND TEGA VERSUS TMIN AND TMGA

The present experiments show that using TEGa as the Ga source in selec tive OMVPE leads to a higher growth rate enhancement of GaAs and GaP t han using TMGa. The combination of TEGa with TMIn (+AsH3 or PH3) yield s a lower In enrichment of selectively grown GaInAs and GaInP than TMI n + TMGa. These results agree with our previous hypothesis that the di fferences in growth rate enhancements observed in selective OMVPE can be related to the differences in the extents of decomposition of the s ource species above the mask, since the decomposition temperature of T EGa is much lower than that of TMGa. We also explain why, although the decomposition temperatures of TEGa and TMIn are similar, there is sti ll a discrepancy in the growth rate enhancements of the Ga and of the In binaries selectively grown using these source reagents.