ELECTRICAL-PROPERTIES OF GAP ON SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

The technique for growing a GaP layer with both a smooth surface and a low carrier concentration is described. It is reported that a very hi gh V/III ratio is necessary to grow a GaP layer on Si with a flat and smooth surface, but from the characteristics of GaP Schottky diodes, a low V/III ratio is necessary for growing a GaP with less defects. So the growth of GaP at low V/III ratio by using a GaP buffer layer grown at high V/III ratio is found to be a suitable technique to obtain dev ice-quality GaP on Si.