Eo. Einset et al., ON THE ORIGIN OF RETURN FLOWS IN HORIZONTAL CHEMICAL-VAPOR-DEPOSITIONREACTORS, Journal of crystal growth, 132(3-4), 1993, pp. 483-490
The mechanism underlying the onset of recirculations, so-called return
flows, in the entrance region of horizontal chemical vapor deposition
reactors is analyzed. This phenomenon, which is observed experimental
ly for reactors with either top or bottom heating, is shown to be the
result of changes in the relative magnitude of vertical and axial pres
sure gradients. A criterion for evaluating whether or not recirculatio
ns will arise is developed in terms of Reynolds and Grashof numbers fo
r the physical system. The predictions based upon this criterion are s
hown to be consistent with published experimental data and numerical s
imulations. The impact of pressure distribution changes on the use of
simplified, parabolic fluid flow simulations is discussed. Finally, it
is shown that variations in relative magnitudes of axial and vertical
pressure gradients may also lead to an unequal distribution of flow a
bove and below a substrate placed in midstream.