CHARACTERIZATION BY ION-CHANNELING OF ZNSE GROWN BY PHOTO-ASSISTED MOLECULAR-BEAM EPITAXY

Authors
HAGA T OHISHI M IMAI K KUMAZAKI K OHMORI K SAITO H ABE Y
Citation
T. Haga et al., CHARACTERIZATION BY ION-CHANNELING OF ZNSE GROWN BY PHOTO-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 132(3-4), 1993, pp. 575-577
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
132
Issue
3-4
Year of publication
1993
Pages
575 - 577
Database
ISI
SICI code
0022-0248(1993)132:3-4<575:CBIOZG>2.0.ZU;2-E
Abstract
Improvement in crystallinity of ZnSe crystals grown by molecular beam epitaxy (MBE) under UV light irradiation was assessed by ion channelin g. The present study confirmed that UV irradiation during MBE improves the value of chi(min) from 0.10 to 0.07 by reducing the density of la ttice imperfections compared to unirradiated samples.