E. Prieur et al., SYNCHROTRON TOPOGRAPHIC STUDY OF DEFECTS IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN SEMIINSULATING GALLIUM-ARSENIDE WAFERS, Journal of crystal growth, 132(3-4), 1993, pp. 599-605
Semi-insulating liquid-encapsulated Czochralski-grown undoped GaAs waf
ers are investigated by making section and large-area synchrotron topo
graphs. The results are compared with optical micrographs taken from a
cleaved edge of the wafer. A three-dimensional cellular structure is
observed. The diameter of a cell is typically 300-500 mum. The cell wa
lls consist of dislocations, which have a [011] preferred direction. T
heir Burgers vector is [101BAR] and their glide plane is {111BAR}. Ars
enic precipitates, the density of which is about 108 cm-3, decorate th
e dislocations. Not all the dislocations form a cellular structure. So
me of them are several millimetres long in the same [011] direction as
those of the cell walls. Others are parallel to the flat and in the p
lanes which form an angle of 50-degrees with the wafer surface.