ON THE STATUS OF WAFER-LEVEL METAL INTEGRITY TESTING

Wafer-level metal integrity testing is very complex. Trade-offs with t est time. stress temperature, test structure, stress technique, and tr ue understanding of the stress, are all involved and are discussed in this work. A discussion of conventional electromigration stress execut ion issues is provided as a prelude to highly accelerated metal integr ity testing in the last section. Much of the published work in wafer-l evel EM and metal integrity testing is used to help describe the issue s and trade-offs involved.