RESISTANCE DECAY AFTER ELECTROMIGRATION AS THE EFFECT OF MECHANICAL-STRESS RELAXATION

Authors
BALDINI GL SCORZONI A TAMARRI F
Citation
Gl. Baldini et al., RESISTANCE DECAY AFTER ELECTROMIGRATION AS THE EFFECT OF MECHANICAL-STRESS RELAXATION, Microelectronics and reliability, 33(11-12), 1993, pp. 1841-1844
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
33
Issue
11-12
Year of publication
1993
Pages
1841 - 1844
Database
ISI
SICI code
0026-2714(1993)33:11-12<1841:RDAEAT>2.0.ZU;2-A
Abstract
Resistance decay has been observed in Aluminum narrow lines when the h igh stressing current in electromigration tests is turned off. It has been interpreted as the consequence of the relaxation of electromigrat ion-induced mechanical stress.