SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE (VOL 13, PG 92, 1995)

Authors
BAILEY AD VANDESANDEN MCM GREGUS JA GOTTSCHO RA
Citation
Ad. Bailey et al., SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE (VOL 13, PG 92, 1995), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 373-373
Citations number
2
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
2
Year of publication
1997
Pages
373 - 373
Database
ISI
SICI code
1071-1023(1997)15:2<373:SOSAGT>2.0.ZU;2-J