FIELD-EMISSION PROPERTIES OF TA-C FILMS WITH NITROGEN DOPING

Authors
PARK KC MOON JH CHUNG SJ JUNG JH JU BK OH MH MILNE WI HAN MK JANG J
Citation
Kc. Park et al., FIELD-EMISSION PROPERTIES OF TA-C FILMS WITH NITROGEN DOPING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 431-433
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
2
Year of publication
1997
Pages
431 - 433
Database
ISI
SICI code
1071-1023(1997)15:2<431:FPOTFW>2.0.ZU;2-I
Abstract
We have studied the electron emission characteristics of tetrahedral a morphous carbon (ta-C) films with different nitrogen content. With inc reasing N content in ta-C, the room-temperature conductivity as well a s the emission current decreases and then increases, resulting in mini ma. The Fermi level shifts toward the conduction band and, thus, the w ork function decreases by N doping in ta-C, however, the emission curr ents of doped ta-C films are less than those of undoped ta-C. (C) 1997 American Vacuum Society.