S. Kim et al., EMISSION CHARACTERISTIC OF DIAMOND-TIP FIELD EMITTER ARRAYS FABRICATED BY TRANSFER MOLD TECHNIQUE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 499-502
Wedge-shaped diamond-tip field emitter arrays were fabricated and char
acterized. The tip radius of the diamond emitter fabricated by using a
silicon mold was about 300 Angstrom. The maximum current density of 8
00 mu A/cm(2) and the threshold voltage of 600 V were obtained from th
e diamond-tip held emitter array, which was a better electrical charac
teristic than that of a flat diamond film. The effects of vacuum press
ure upon emission characteristics were investigated. The emission char
acteristic of the diamond-tip held emitter array was not varied over a
wide range of vacuum pressure relatively to the hat diamond film. (C)
1997 American Vacuum Society.