EMISSION CHARACTERISTIC OF DIAMOND-TIP FIELD EMITTER ARRAYS FABRICATED BY TRANSFER MOLD TECHNIQUE

Authors
KIM S JU BK LEE YH PARK BS BAIK YJ LIM S OH MH
Citation
S. Kim et al., EMISSION CHARACTERISTIC OF DIAMOND-TIP FIELD EMITTER ARRAYS FABRICATED BY TRANSFER MOLD TECHNIQUE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 499-502
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
2
Year of publication
1997
Pages
499 - 502
Database
ISI
SICI code
1071-1023(1997)15:2<499:ECODFE>2.0.ZU;2-N
Abstract
Wedge-shaped diamond-tip field emitter arrays were fabricated and char acterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 Angstrom. The maximum current density of 8 00 mu A/cm(2) and the threshold voltage of 600 V were obtained from th e diamond-tip held emitter array, which was a better electrical charac teristic than that of a flat diamond film. The effects of vacuum press ure upon emission characteristics were investigated. The emission char acteristic of the diamond-tip held emitter array was not varied over a wide range of vacuum pressure relatively to the hat diamond film. (C) 1997 American Vacuum Society.