HETEROEPITAXY OF CHEMICALLY DEPOSITED CDS ON LARGE LATTICE-MISMATCHED(111)GAP

Heteroepitaxial CdS films (60 nm) have been deposited at 85 degrees C on GaP from aqueous solutions of ammonia containing cadmium ions and t hiourea precursors. Structural characterizations have been performed w ith RHEED, five circle XRD and TEM observations of cross sections. The large lattice mismatch results in the formation of a large density of stacking faults in the CdS leading to a polytype structure with an eq ual proportion of cubic and hexagonal modifications. Changes in the la ttice parameter are observed in the CdS near the interface.