THE FABRICATION OF INGAP SI LIGHT-EMITTING DIODE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

Authors
HU CC SHEU CS LEE MK
Citation
Cc. Hu et al., THE FABRICATION OF INGAP SI LIGHT-EMITTING DIODE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Materials chemistry and physics, 48(1), 1997, pp. 17-20
Citations number
12
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
48
Issue
1
Year of publication
1997
Pages
17 - 20
Database
ISI
SICI code
0254-0584(1997)48:1<17:TFOISL>2.0.ZU;2-A
Abstract
In this work, heteroepitaxy of InGaP on Si substrate with a GaAs buffe r layer grown by metalorganic chemical vapor deposition is investigate d. An InGaP p/n junction light emitting diode (LED) with electrolumine scence linewidth of 65 meV and peak wavelength at 652 nm under 30 mA i njection current has been fabricated. The feasibility of an InGaP LED integrated with Si electronics' on Si substrates is demonstrated.