DESIGN OF A NEW TEST STRUCTURE FOR THE STUDY OF ELECTROMIGRATION WITHEARLY RESISTANCE CHANGE MEASUREMENTS

Authors
DECEUNINCK W MANCA J DHAEGER V VANOLMEN J DESCHEPPER L STALS LM
Citation
W. Deceuninck et al., DESIGN OF A NEW TEST STRUCTURE FOR THE STUDY OF ELECTROMIGRATION WITHEARLY RESISTANCE CHANGE MEASUREMENTS, Microelectronics and reliability, 37(12), 1997, pp. 1813-1816
Citations number
5
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
12
Year of publication
1997
Pages
1813 - 1816
Database
ISI
SICI code
0026-2714(1997)37:12<1813:DOANTS>2.0.ZU;2-I
Abstract
A new test structure has been designed in order to perform accurate ea rly resistance change measurements in metal lines submitted to high cu rrent stress. This test structure integrates both advantages of the so -called ''absolute'' and ''bridge'' techniques, resulting in accurate resistance measurements with a high resolution for both the current-st ressed and reference strip. Due to the improved measurement configurat ion, the aging kinetics of a metal line under current stress can be st udied in more detail. (C) 1997 Elsevier Science Ltd.