EFFECT OF IRRADIATION ON THE ELECTRICAL-PROPERTIES OF SN-DOPED GE SINGLE-CRYSTALS

The electrical properties of irradiated n-type Ge single crystals with a carrier concentration of 10(14) cm(-3) were measured. The crystals were grown by the Czochralski technique and doped with Sn to 10(19) cm (-3). At the initial stage of irradiation, the radiation resistance of Sn-doped Ge increases as compared to that of a control sample. The st udy of relaxation during annealing reveals that the radiation-induced acceptor defects in the irradiated samples are less thermally stable t han in the control sample. Doping of n-type Ge with Sn to concentratio ns above 10(19) -3 leads to a decrease in carrier mobility at temperat ures below 200 K.