GROWTH OF ZNAS2 SINGLE-CRYSTALS BY DIRECTIONAL SOLIDIFICATION IN A BRIDGMAN GEOMETRY

Authors
MARENKIN SF MAIMASOV AB POPOV VA
Citation
Sf. Marenkin et al., GROWTH OF ZNAS2 SINGLE-CRYSTALS BY DIRECTIONAL SOLIDIFICATION IN A BRIDGMAN GEOMETRY, Inorganic materials, 33(4), 1997, pp. 330-334
Citations number
14
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
33
Issue
4
Year of publication
1997
Pages
330 - 334
Database
ISI
SICI code
0020-1685(1997)33:4<330:GOZSBD>2.0.ZU;2-F
Abstract
A method for preparing large (d = 30 mm, I = 150 mm), structurally per fect zinc diarsenide crystals in a two-zone vertical Bridgman geometry is described. Optimal growth conditions (temperatures of melting and solidification zones, pulling rate, and excess arsenic content) are es tablished. p-Type ZnAs2 single crystals are grown with a 77-K carrier concentration of 10(15) cm(-3) and Hall mobility of 3 x 10(3) cm(2)/(V s), dislocation density of (5-6) x 10(2) cm(-2), and absorption coeff icient of 0.3-0.5 cm(-1) at lambda = 2.5 mu m.