GROWTH AND CHARACTERIZATION OF N-TYPE INP INGAAS QUANTUM-WELL INFRARED PHOTODETECTORS FOR RESPONSE AT 8.93 MU-M/

We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 mu m High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double- crystal x-ray diffraction and cross-sectional transmission electron mi croscopy. Based upon the structural parameters determined by these met hods, the photocurrent response spectra were simulated using a six-ban d effective bond-orbital model. The theoretical results are in excelle nt agreement with experimental data. Additional important device chara cteristics such as dark current, spectral response, and absolute respo nsivity are also presented.