GROWTH AND CHARACTERIZATION OF INGAAS INP P-QUANTUM-WELL INFRARED PHOTODETECTORS WITH EXTREMELY THIN QUANTUM-WELLS/

High-quality InGaAs/InP quantum wells with ultra-narrow well widths (s imilar to 10 Angstrom) and peak response at 4.55 mu m were grown by ga s source molecular beam epitaxy. These structures were characterized b y cross-sectional tunneling microscopy (XSTM), double-crystal x-ray di ffraction (DCXRD), and cross-sectional transmission electron microscop y (XTEM). Based on the structural parameters determined by XTEM, XSTM, and DCXRD, the field dependent photocurrent spectra were simulated us ing a six-band effective bond-orbital model. The theoretical calculati ons are in excellent agreement with experimental data. When used to fa bricate p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs) , and combined with the high responsivity of 8.93 mu m n-type InGaAs/I nP QWIPs, these structures offer the possibility of dual band monolith ically integrated QWIPs.