IDENTIFICATION OF CU-RELATED THERMALLY STIMULATED CURRENT TRAP IN UNDOPED SEMIINSULATING GAAS

Authors
FANG ZQ LOOK DC JONES RL
Citation
Zq. Fang et al., IDENTIFICATION OF CU-RELATED THERMALLY STIMULATED CURRENT TRAP IN UNDOPED SEMIINSULATING GAAS, Journal of electronic materials, 26(12), 1997, pp. 29-31
Citations number
16
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
26
Issue
12
Year of publication
1997
Pages
29 - 31
Database
ISI
SICI code
0361-5235(1997)26:12<29:IOCTSC>2.0.ZU;2-2
Abstract
In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap T-a at 170K is sometimes observed. The activation energy and capture cross section of T-a are 0.43 eV and 3.7 x 10(-15) cm(2), respectively. Based on a good correlation with the Cu-related photolum inescence emission at 1.36 eV and the Cu-related deep level transient spectroscopy hole traps HL4 and HB4, we argue that T-a is a Cu-related hole-trap.