CRITICAL MOSFETS OPERATION FOR LOW-VOLTAGE LOW-POWER ICS - IDEAL CHARACTERISTICS, PARAMETER EXTRACTION, ELECTRICAL NOISE AND RTS FLUCTUATIONS

This paper gives the basic aspects needed for a proper description of the MOSFET operation in the context of low voltage/low power applicati ons. The particular, the threshold voltage, the mobility and the subth reshold swing which represents important issues to this respect will b e discussed. The most popular procedures for the MOSFET parameter extr action will also be presented and exemplified. Finally the low frequen cy noise and random telegraph signals (RTS) fluctuations which become limiting factors for analog compatible CMOS circuits and even could de grade the noise margin performance of digital ULSI circuits will be ad dressed.