APPLIED BIAS SLEWING IN TRANSIENT WIGNER FUNCTION SIMULATION OF RESONANT-TUNNELING DIODES

The Wigner function formulation of quantum mechanics has shown much pr omise as a basis for accurately modeling quantum electronic devices, e specially under transient conditions, In this work, we demonstrate the importance of using a finite applied bias slew rate (as opposed to in stantaneous switching) to better approximate experimental device condi tions, and thus to produce more accurate transient Wigner function sim ulation results, We show that the use of instantaneous (and thus unphy sical) switching can significantly impact simulation results and lead to incorrect conclusions about device operation, We also find that sle wed switching can reduce the high computational demands of transient s imulations, The resonant tunneling diode (RTD) is used as a test devic e, and simulation results are produced with SQUADS (Stanford QUAntum D evice Simulator).