1-D MODEL OF CURRENT DISTRIBUTION AND RESISTANCE CHANGES FOR ELECTROMIGRATION IN LAYERED LINES

Citation
De. Grosjean et H. Okabayashi, 1-D MODEL OF CURRENT DISTRIBUTION AND RESISTANCE CHANGES FOR ELECTROMIGRATION IN LAYERED LINES, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 744-750
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
44
Issue
5
Year of publication
1997
Pages
744 - 750
Database
ISI
SICI code
0018-9383(1997)44:5<744:1MOCDA>2.0.ZU;2-7
Abstract
We present a one-dimensional (I-D) analytical model incorporating cont act resistance to calculate the current distribution between an Al lin e and refractory metal underlayer in a drift velocity measurement stru cture for electromigration. The current profile so calculated is more accurate than the usual assumption that the current all flows in the A l portion, and it should give a more accurate and reliable relation be tween drift velocity and current density. It should also be useful in correlating local current density with voiding, Various experimentally observed voiding processes are included in the model; they reproduce and predict different types of changes in total line resistance, most notably the step structure observed in electromigration.