A 3-TERMINAL MODEL FOR DIFFUSED AND ION-IMPLANTED RESISTORS

Authors
BOOTH RVH MCANDREW CC
Citation
Rvh. Booth et Cc. Mcandrew, A 3-TERMINAL MODEL FOR DIFFUSED AND ION-IMPLANTED RESISTORS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 809-814
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
5
Year of publication
1997
Pages
809 - 814
Database
ISI
SICI code
0018-9383(1997)44:5<809:A3MFDA>2.0.ZU;2-H
Abstract
In this paper, we present a new, physically based 3-terminal model for diffused and ion-implanted resistors, The model accounts for the effe cts of geometry, temperature, and bias, and includes parasitic p-n jun ction diodes. The junction depletion capacitances are distributed to m odel high-frequency behavior accurately.