S. Karmalkar, A NEW EQUIVALENT MOSFET REPRESENTATION OF A HEMT TO ANALYTICALLY MODEL NONLINEAR CHARGE CONTROL FOR SIMULATION OF HEMT DEVICES AND CIRCUITS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 862-868
It is shown that, from the point of view of the behavior of the charge
and position of the Two-Dimensional Electron Gas (2-DEG) as a functio
n of gate-source and drain-source voltages, the complex High Electron
Mobility Transistor (HEMT) can be regarded as a simple Buried-Channel
(BC) MOSFET, Thus, the characteristics of a HEMT, namely channel charg
e and capacitance/transconductance as a function of gate voltage below
and above threshold are akin those of a BC MOSFET, Hence, there are d
iscrepancies in the conventional Surface Channel MOSFET-like approach
to HEMT modeling, Existing simple BC MOSFET de and ac models can be us
ed for on-paper analysis and computer aided simulation of HEMT devices
and circuits, if the HEMT is represented by an equivalent BC MOSFET a
s derived in this paper. The new representation can be useful for mode
ling of short-channel HEMT phenomena.