A NEW EQUIVALENT MOSFET REPRESENTATION OF A HEMT TO ANALYTICALLY MODEL NONLINEAR CHARGE CONTROL FOR SIMULATION OF HEMT DEVICES AND CIRCUITS

It is shown that, from the point of view of the behavior of the charge and position of the Two-Dimensional Electron Gas (2-DEG) as a functio n of gate-source and drain-source voltages, the complex High Electron Mobility Transistor (HEMT) can be regarded as a simple Buried-Channel (BC) MOSFET, Thus, the characteristics of a HEMT, namely channel charg e and capacitance/transconductance as a function of gate voltage below and above threshold are akin those of a BC MOSFET, Hence, there are d iscrepancies in the conventional Surface Channel MOSFET-like approach to HEMT modeling, Existing simple BC MOSFET de and ac models can be us ed for on-paper analysis and computer aided simulation of HEMT devices and circuits, if the HEMT is represented by an equivalent BC MOSFET a s derived in this paper. The new representation can be useful for mode ling of short-channel HEMT phenomena.