OPTIMUM COLLECTOR WIDTH OF VLSI BIPOLAR-TRANSISTORS FOR MAXIMUM F(MAX) AT HIGH-CURRENT DENSITIES

Authors
KUMAR MJ DATTA K
Citation
Mj. Kumar et K. Datta, OPTIMUM COLLECTOR WIDTH OF VLSI BIPOLAR-TRANSISTORS FOR MAXIMUM F(MAX) AT HIGH-CURRENT DENSITIES, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 903-905
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
5
Year of publication
1997
Pages
903 - 905
Database
ISI
SICI code
0018-9383(1997)44:5<903:OCWOVB>2.0.ZU;2-Y
Abstract
A simple analytical model for optimum collector epi-layer thickness W- epi to maximize f(max) of VLSI bipolar transistors having reach-throug h collector is reported. Numerical and analytical results for W-epi ar e compared to verify the validity of our model for the optimum collect or epi-layer thickness at high current densities.