AN IMPROVED SMALL-SIGNAL EQUIVALENT-CIRCUIT MODEL FOR III-V NITRIDE MODFETS WITH LARGE CONTACT RESISTANCES

Authors
BURM J SCHAFF WJ EASTMAN LF AMANO H AKASAKI I
Citation
J. Burm et al., AN IMPROVED SMALL-SIGNAL EQUIVALENT-CIRCUIT MODEL FOR III-V NITRIDE MODFETS WITH LARGE CONTACT RESISTANCES, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 906-907
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
5
Year of publication
1997
Pages
906 - 907
Database
ISI
SICI code
0018-9383(1997)44:5<906:AISEMF>2.0.ZU;2-L
Abstract
A small-signal equivalent circuit model of III-V nitride MODFET's is p resented. The metal-semiconductor ohmic contacts were modeled as a tra nsmission line, as parasitic Z-elements cannot be modeled as a simple resistor/inductor discrete circuit due to high contact resistances, Th e model describes the highly resistive contacts with a good accuracy.