MODIFICATION OF THE EINSTEIN EQUATIONS OF MAJORITY-CARRIERS AND MINORITY-CARRIERS WITH BAND-GAP NARROWING EFFECT IN N-TYPE DEGENERATE SILICON WITH DEGENERATE APPROXIMATION AND WITH NON-PARABOLIC ENERGY-BANDS

In this brief, a new idea is presented for a modification of Einstein equations of the majority- and minority-carriers with the band gap nar rowing effect in an n-type degenerate and uniformly-doped silicon with degenerate approximation and with nonparabolic energy bands. It may i mply that the Einstein equation may be one factor for the increase of the minority-carrier diffusion coefficient at high doping levels.