MODELING AND CHARACTERIZATION OF NONUNIFORM SUBSTRATE DOPING

This article presents a new model for the effect of the transverse non -uniform substrate doping on the threshold voltage of MOS transistors. The new model is validated using 2D device simulations and measuremen ts of a CMOS low-voltage process. A simple associated characterization method is also presented. The parameters related to the non-uniform d oping are extracted from the pinch-off vs gate voltage characteristic, measured at constant current from a device biased in moderate inversi on. (C) 1997 Elsevier Science Ltd.