SCHOTTKY DIODE CHARACTERISTICS OF TI ON STRAINED-SI

Authors
CHATTOPADHYAY S BERA LK MAHARATNA K CHAKRABARTI S DHAR S RAY SK MAITI CK
Citation
S. Chattopadhyay et al., SCHOTTKY DIODE CHARACTERISTICS OF TI ON STRAINED-SI, Solid-state electronics, 41(12), 1997, pp. 1891-1893
Citations number
16
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
12
Year of publication
1997
Pages
1891 - 1893
Database
ISI
SICI code
0038-1101(1997)41:12<1891:SDCOTO>2.0.ZU;2-W
Abstract
The Schottky barrier height and ideality factor of Ti on p-type strain ed-Si (grown on a graded relaxed Si0.82Ge0.18 buffer layer) were inves tigated in the temperature range 200-300 K using the current-voltage ( I-V) characteristics and were found to be temperature dependent. While the ideality factor decreases with an increase in temperature, the ba rrier height increases. (C) 1997 Elsevier Science Ltd.