HIGH-PERFORMANCE PSEUDOMORPHIC INGAP INGAAS POWER HEMTS/

Power transistors with a low d.c. supply voltage were demonstrated wit h pseudomorphic InGaP/In0.2Ga0.8As/GaAs heterostructure field effect t ransistors on GaAs substrates and 1 mu m gate length technology. A cur rent density of 200 mA mm(-1) and an extrinsic transconductance of 300 mS mm(-1) were exhibited on a 400 mu m gate width process control mon itor device. For a 1 cm gate width device measured at 850 MHz and V-ds = 1.3 V, state-of-the-art results, 57.4% for the PAE, 12.7 dB for the linear gain and 21.5 dBm for the output power, were obtained. (C) 199 7 Elsevier Science Ltd.