Production and laboratory AlGaAs/GaAs HBT processes were developed, en
abling implementation of high-precision and high-speed circuits to mee
t the ever increasing demands on information bandwidths. Under normal
bias conditions, the production HBT process shows transistor f(t) and
f(max) above 50 GHz, while the laboratory process reveals f(t) of 60 G
Hz and f(max) of 110 GHz. With these two HBT processes, numerous high-
speed and high-precision circuits for signal and data processing were
implemented. In particular, we have designed and fabricated a 8-bit, 2
GS s(-1) ADC and a 6-bit, 4 GS s(-1) ADC for instrumentation and digi
tal receiver applications; a 40 GBit s(-1) 4:1 multiplexer and an 8-ch
annel, 2.5 GBit s(-1) laser driver array for optical communication tra
nsmitters; a 50 dB Omega, 25 GHz preamplifier, a DC-26 GHz 10-16 dB va
riable gain amplifer, a 30 GBit s(-1) data/clock regeneration circuit,
two 40 GBit s(-1) nonlinear (differentiate/rectify and delay/multiply
) clock regeneration circuits, and a 40 GBit s(-1) phase detector circ
uit for optical communication receivers. (C) 1997 Elsevier Science Ltd
.