HIGH-PERFORMANCE SI-SIGE HBTS SIGE-TECHNOLOGY DEVELOPMENT IN ESPRIT-PROJECT-8001 TIBIA - AN OVERVIEW

Five major European Semiconductor Companies have cooperated on the dev elopment of technologies for the fabrication of Si-SiGe-based Heteroju nction Bipolar Transistors. This cooperation was part of the European Community Esprit Project 8001 TIBIA,on BICMOS Technology Development a nd Applications. This article presents an overview of the various conc epts studied by the project-partners, the fabrication processes and th e results obtained on single devices and preliminary test-circuits (wh ich already demonstrate the added value of Si-SiGe HBTs in existing Si -technology). A more detailed description is given of the process stud ied at Philips, which involves double-polysilicon transistors with a s electively deposited Si-SiGe base. (C) 1997 Elsevier Science Ltd.