FABRICATION OF P(-GATE INAS-CHANNEL HEMT BASED ON INP())

We have successfully fabricated a p(+)-gate InGaAs/InAlAs HEMT with a thin InAs layer inserted in the InGaAs channel. An intrinsic transcond uctance of over 400 mS mm(-1) and maximum brain current of 250 mA mm(- 1) were obtained in a 1 mu m gate length device with relatively thick gate-to-channel barrier of 375 Angstrom. We have confirmed that the p( +)-gate InAs-channel HEMT operates as well as conventional Schottky ga te HEMT. (C) 1997 Published by Elsevier Science Ltd.