CHARACTERIZATION OF FULLY FABRICATED PHEMTS USING PHOTOELECTRIC TECHNIQUES

Authors
SCHUERMEYER F
Citation
F. Schuermeyer, CHARACTERIZATION OF FULLY FABRICATED PHEMTS USING PHOTOELECTRIC TECHNIQUES, Solid-state electronics, 41(10), 1997, pp. 1529-1533
Citations number
5
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
10
Year of publication
1997
Pages
1529 - 1533
Database
ISI
SICI code
0038-1101(1997)41:10<1529:COFFPU>2.0.ZU;2-A
Abstract
Photoconduction and emission measurements have become an important too l to study the energy configuration of fully fabricated HEMTs. The spe ctral response provides information on the energy configuration of the well at the selected gate voltage. The transistor amplifies the photo generated charge and this amplification provides information on charge confinement and storage. Elsevier Science Ltd.