GAN BASED HETEROSTRUCTURE FOR HIGH-POWER DEVICES

We discuss the potential of GaN-based field effect transistor for high -power, high-temperature operation. At room temperature, the GaN/AlGaN doped channel HFETs (DC-HFETs) demonstrated highest frequency operati on among all wide band gap semiconductor devices because of excellent transport properties of two dimensional electron gas at the AlGaN/GaN heterointerface and a large sheet carrier concentration in the device channel. CW operation at 10 and 15 GHz was also recently reported. Mon te Carlo simulations indicate that short-channel GaN devices should ha ve transported superior even to GaAs. However, improved thermal and mi crowave designs are required in order to take advantage of these mater ial properties for applications in high power devices. (C) 1997 Elsevi er Science Ltd.