HIGH-POWER APPLICATIONS FOR GAN-BASED DEVICES

The microwave performance potential of electronic devices fabricated f rom GaN-based semiconductors is described. The investigation makes use of theoretical simulations and the results are compared to experiment al measurements. Excellent agreement between the simulated and measure d data is obtained. It is demonstrated that devices fabricated from th ese semiconductors make possible microwave power amplifiers with super ior RF power performance, particularly at elevated temperature, compar ed to comparable components fabricated from GaAs MESFET's. In particul ar, room temperature RF output power on the order of 4-5 W mm(-1) of g ate periphery with power-added efficiency approaching the ideal values for class A and B operation is available. These devices are likely to find application in power amplifiers for base stations transmitters f or cellular telephone systems, HDTV transmitters, power modules for ph ased-array radars, and other applications. The devices are particularl y attractive for applications that require high RF output power and op eration at elevated temperature since cooling requirements can be mini mized or eliminated. (C) 1997 Elsevier Science Ltd.