INP-BASED MILLIMETER-WAVE PIN DIODES FOR SWITCHING AND PHASE-SHIFTINGAPPLICATIONS

InP-based PIN design, technology and circuit implementation were addre ssed and successfully applied to millimeter-wave MMIC switches and pha se shifters. A wet etchant based via technology was developed and appl ied to InP MMIC fabrication. MOCVD and MBE material growth was used fo r PIN realization and PIN specific growth optimization is discussed. E xperimentally determined electrical characteristics and good performan ce is presented for a variety of InP-based PIN MMICs including coplana r and microstrip K-a-band SPST switches, W-band microstrip SPST switch es and a 90-degree phase shifter. (C) 1997 Elsevier Science Ltd.