DEMONSTRATION OF ENHANCEMENT-MODE P-CHANNEL AND M-CHANNEL GAAS MOSFETS WITH GA2O3(GD2O3) AS GATE OXIDE

We report the demonstration of both enhancement-mode p- and n-channel GaAs metal oxide semiconductor field effect transistors (MOSFETs) on G aAs semi-insulating substrates using high quality Ga2O3(Gd2O3) as the gate dielectric and the conventional ion-implant technology. The sourc e and drain regions were selectively implanted with Zn or Si for low r esistance ohmic contacts for p-or n-MOSFETs, respectively. AuBe/Pt/Au, Ge/Mo/Au-Ge/Mo/Au, and Ti/Pt/Au were deposited for p-and n-ohmic cont acts and gate electrode, respectively. The devices, with a 4 x 50 mu m (2) gate geometry, exhibit an extrinsic transconductance of 0.18 and 0 .1 mS/mm for p-and n-MOSFETs, respectively, and an excellent gate brea kdown held greater than 3 MV cm(-1). (C) 1997 Elsevier Science Ltd.