A REVISED MODEL FOR CARRIER TRAPPING-DETRAPPING 1 F NOISE/

The model presented here is an extension of the carrier trapping-detra pping model for 1/f noise, in semiconductor devices with interfaces fo rmed by oxide or insulating layers. The validity of the conventional a ssumptions, currently used to explain trapping-detrapping 1/f noise, i s discussed and a revised set of assumptions is proposed. It is shown that 1/f noise that is caused by election trapping and detrapping at o xide interfaces, can be explained for a wide variety of activation bar rier distributions, assuming the revised set of assumptions. (C) 1997 Elsevier Science Ltd.