HIGH-DEPOSITION-RATE GROWTH OF PZT THIN-FILMS BY REACTIVE ELECTRON-BEAM COEVAPORATION USING TI ZR ALLOY/

Citation
S. Mochizuki et al., HIGH-DEPOSITION-RATE GROWTH OF PZT THIN-FILMS BY REACTIVE ELECTRON-BEAM COEVAPORATION USING TI ZR ALLOY/, Integrated ferroelectrics, 12(2-4), 1996, pp. 125-130
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
12
Issue
2-4
Year of publication
1996
Pages
125 - 130
Database
ISI
SICI code
1058-4587(1996)12:2-4<125:HGOPTB>2.0.ZU;2-J
Abstract
Lead zirconate titanate (PZT) thin films were prepared by coevaporatio n of titanium/zirconium alloy and lead metal with an electron beam gun . Each of evaporation rates was independently controlled by each quart z crystal thickness monitor, Titanium/zirconium alloy was used because of simplicity of chemical composition control. To promote oxidation o f the films, a mixed gas of oxygen and ozone (5%) was used. When evapo ration rates of titanium/zirconium alloy and lead metal were controlle d moderately, perovskite phase PZT film was obtained on 50 nm-thick-Pb TiO3-film at substrate temperature of 550 degrees C. When atomic ratio of titanium/zirconium alloy was 50:50, chemical composition of the fi lms was Ti:Zr = 9:1. Deposition rate was greater than 50 nm/min, which was much larger than that by the sputtering method.