S. Mochizuki et al., HIGH-DEPOSITION-RATE GROWTH OF PZT THIN-FILMS BY REACTIVE ELECTRON-BEAM COEVAPORATION USING TI ZR ALLOY/, Integrated ferroelectrics, 12(2-4), 1996, pp. 125-130
Lead zirconate titanate (PZT) thin films were prepared by coevaporatio
n of titanium/zirconium alloy and lead metal with an electron beam gun
. Each of evaporation rates was independently controlled by each quart
z crystal thickness monitor, Titanium/zirconium alloy was used because
of simplicity of chemical composition control. To promote oxidation o
f the films, a mixed gas of oxygen and ozone (5%) was used. When evapo
ration rates of titanium/zirconium alloy and lead metal were controlle
d moderately, perovskite phase PZT film was obtained on 50 nm-thick-Pb
TiO3-film at substrate temperature of 550 degrees C. When atomic ratio
of titanium/zirconium alloy was 50:50, chemical composition of the fi
lms was Ti:Zr = 9:1. Deposition rate was greater than 50 nm/min, which
was much larger than that by the sputtering method.